TapTechNews May 14th news, according to South Korean media Hankyung, two storage giants SK Hynix and Samsung Electronics stated at an investor event earlier this month that 20% of the overall DRAM production line is now used for HBM memory production.
Compared to general DRAM, HBM memory has a higher unit price. However, due to reasons such as poor TSV process yield, the consumption of wafers is two to three times that of traditional memory. Memory companies must increase the proportion of production lines to meet the growing demand for HBM.
Against the backdrop of this capacity occupation, a representative from Samsung Electronics predicted that not only HBM memory, but also the prices of general DRAM (such as standard DDR5) will not decrease this year.
SK Hynix confirmed again that based on its production capacity as of the end of this year, the company has already allocated production capacity for HBM memory until 2025;
On the other hand, Samsung Electronics stated that its HBM orders are similar to competitors, are already sold out, and it is estimated that there will be no oversupply of HBM memory next year.
A representative from Samsung Electronics confirmed that the company's HBM4 memory plan will be developed next year and mass production will be achieved in 2026, and Samsung Electronics plans to begin using hybrid bonding in HBM4 memory.
TapTechNews previously reported that SK Hynix believes it is unlikely to use hybrid bonding in HBM4, holding a different view from Samsung Electronics.
In addition, both companies are optimistic about the enterprise SSD market, with Samsung Electronics representatives believing that the growth in demand related to this sector will be a long-term trend.