TapTechNews May 27 - There were previous reports that Samsung Electronics' latest high-bandwidth memory (HBM) chip had not passed NVIDIA's test. An 'informed source' said that the company's chip was affected due to heat and power consumption problems.
However, according to the Korean media BusinessKorea report, Samsung Electronics released a statement denying the relevant reports. The company claimed that they are 'moothly conducting the HBM chip testing process' with multiple global partners and emphasized that 'they are continuously cooperating with other business partners to ensure product quality and reliability'.
Samsung recently started mass-producing its fifth-generation HBM chip - 24GB (8-Hi)/36GB (12-Hi) HBM3E product. On the currently mass-produced HBM3E, Samsung does not use the 1bnm process DRAM die like its competitors SK Hynix and Micron, but still uses 1anm particles, which is at a disadvantage in terms of energy consumption. Coupled with the relevant negative public opinion this time, this leads some analysts to suspect whether Samsung 'has the ability to quickly recapture market share from SK Hynix'.