TapTechNews July 3rd news, Kioxia Corporation released a press release today, and samples of 2Tb Quad-Level-Cell (QLC) storage have begun to be shipped.
The 2Tb QLC storage product adopts the eighth-generation BiCS FLASH 3D flash memory technology, and the device has the highest capacity in the industry, which is expected to promote the growth in multiple application fields including AI.
TapTechNews quoted the official press release. Kioxia said that compared to Kioxia's current fifth-generation QLC device, the newly launched 2Tb QLC has a bit density increase of about 2.3 times and a write energy efficiency increase of about 70%.
The product adopts a 16-chip stacked architecture, with a compact package, the size is 11.5 x 13.5 millimeters, and the height is 1.5 millimeters, and the total capacity reaches 4 TB.
Kioxia said that in the production process, its proprietary CBA (CMOS directly bonded to the array) technology is used, which helps to create higher-density devices and supports a faster 3.6 Gbps interface speed. These developments are aimed at meeting the increasing demand in applications with extremely high requirements for power consumption and space efficiency.
Kioxia has also expanded its product line and launched a 1Tb QLC memory, which is specifically designed for performance-sensitive applications such as client solid-state drives and mobile devices. Compared to the 2Tb model, the continuous write performance of this model has increased by about 30%, and the read latency time has been shortened by about 15%.