Nanya Technology's 1anm Process DRAM Update

TapTechNews May 30th news, comprehensively reported by Taiwan media such as the China Business Times and the Economic Daily, Nanya Technology stated at the annual shareholder meeting yesterday that the first 1anm process DRAM memory product, the 16GbDDR5 particle, will enter the trial production stage at the beginning of next year.

Nanya Technology is currently conducting trial production of the 1bnm process DRAM, covering 8/4GbDDR4 memory and 16GbDDR5 memory. Nanya Technology said that its first batch of DDR5 memory will be in a small amount of trial production in the second half of this year and further increase the output next year.

In addition, Nanya Technology has also planned 16GbDDR5 iterative versions, 16GbLPDDR5 memory, 16GbLPDDR4 memory and 4GbDDR3 memory and other products at the 1bnm node.

Nanya Technology will also simultaneously develop TSV technology this year, and in the future will combine DDR5 memory particles and this technology to manufacture high-capacity (3DS) DRAM memory modules to meet the needs of the server market.

Nanya Technology said that it has achieved a 30% bit growth rate in each process generation and is currently cooperating with the Belgian Imec Microelectronics Research Center to prepare for the advanced DRAM process using EUV lithography machines.

Nanya Technology achieved consolidated revenue of NT$3206 million (TapTechNews note: currently about 718 million RMB) in April, a year-on-year increase of 41.88%.