TapTechNews May 17th, according to a report by South Korean media ZDNetKorea today, Samsung Electronics is considering using 1nm process (sixth-generation 10+nm level) DRAM dies in HBM4 memory to enhance the competitiveness of its products in terms of energy efficiency and other aspects.
The representative of Samsung Electronics stated at the industry conference Memcon2024 earlier this year that the company plans to achieve mass production of the 1nm process by the end of this year; and in terms of HBM4, Samsung Electronics expects to complete the development of this new AI memory next year and achieve mass production in 2026.
On the currently mass-produced HBM3E, Samsung did not adopt 1bnm process DRAM dies like its competitors SK Hynix and Micron, but still used 1anm particles, which is at a disadvantage in terms of energy consumption.
This is considered by sources to be an important incentive for Samsung to internally consider introducing 1nm DRAM particles in HBM4.
TapTechNews learned that the first batch of DRAM products at the same process node are generally standard DDR/LPDDR products for the desktop and mobile markets, and the new process will be introduced in high-value and low-yield HBM only after it matures.
Sources also said that the executives and working groups related to Samsung Electronics' HBM business also plan to simultaneously shorten the development time cycle of HBM4 to keep up with the needs of AI processor manufacturers. But this will inevitably bring greater yield risk.
At present, SK Hynix, the leading enterprise in the HBM memory field, has expressed the intention to introduce 1nm process particles in HBM4E, but has not officially confirmed which process of DRAM is used in HBM4 memory.