Samsung to Mass Produce SF2Z with BSPDN in 2027
TapTechNews June 13th, Samsung Electronics announced at the Samsung Foundry Forum 2024 North America held early this morning Beijing time that its first process node SF2Z using BSPDN (Backside Supply Power Network) will be mass-produced and launched in 2027.
The BSPDN technology transfers the power supply network of the chip to the backside of the wafer and separates it from the signal circuit. This can simplify the power supply path and significantly reduce the interference of the power supply circuit to the interconnect signal circuit.
All three major advanced process foundries currently regard the backside power supply as the key technology for the next evolution of the process:
Intel will be the first to apply its backside power supply solution PowerVia in its Intel 20A process this year;
Taiwan Semiconductor Manufacturing Company (TSMC) said that the A16 node with its SuperPowerRail backside power rail will be put into mass production in the second half of 2026.
Samsung Electronics said that the SF2Z process uses the optimized BSPDN technology, which not only improves the comprehensive parameters of PPA (TapTechNews Note: that is, power consumption, performance, and area), but also significantly reduces the circuit voltage drop, thereby enhancing the performance of HPC/AI chip design.
SF2Z is an important part of Samsung's 2nm process family: the first-generation 2nm process SF2 for mobile applications will be mass-produced in 2025; the improved version SF2P will be launched in 2026;
In the same year as SF2P, the SF2X process for HPC/AI applications will be released; while the SF2A process for automotive environments will be launched in 2027.
