Samsung Showcases New SSDs and Technologies at 2024 Flash Memory Summit

TapTechNews August 8th news, Samsung showcased several new SSD products - PM1753, BM1743, PM9D3a, PM9E1 at the 2024 Flash Memory Summit (FMS), and also introduced the 9th-generation QLC V-NAND, TLC V-NAND, as well as CMM-D - DRAM, CMM-HTM, CMM-HPM, CMM-BCXL technologies.

The BM1743 uses QLC flash memory, with a capacity of up to 128TB, a consecutive read speed of 7.5GB/s, a write speed of 3.5GB/s, 1.6 million IOPS for random reads, and 45,000 IOPS for writes. It adopts a 2.5-inch form factor and a U.2 interface, and the idle power consumption is reduced to 4 watts, and even only 2 watts after subsequent OTA updates.

The PM1753 is even faster, with a consecutive read speed of 14.8GB/s and a write speed of 11GB/s, promising to provide 3.4 million IOPS for random read performance and 600,000 IOPS for writes, with a maximum capacity of 32TB, and U.2 and E3.S versions are available, and other details have not been announced.

Samsung also mentioned in the PPT a 1 petabyte SSD, but the expected release date is 2035. In addition, the 256TB SSD will be launched between 2024 and 2026; 512TB will be launched between 2027 and 2029, and is only planned for use in EDSFF-E3.L data centers. As for the consumer-level M.2, we have to wait at least until 2027 to buy the 16TB related products from Samsung.

TapTechNews noticed that Samsung Electronics also mentioned several products at the 2024 Open Compute China Summit (OCPChina) held in Beijing today, such as the PM1743a (32TB/64TB) launched at the end of 2023, as well as the data center-level PM9D3a, and the PM1753 based on the 9th-generation VNAND technology.

According to the introduction, as Samsung's first 8-channel PCIe Gen5 SSD, the PM9D3a breaks through the limitations of the existing flash memory hierarchy, achieving a random write performance of up to 50K IOPS per terabyte, and takes the lead in supporting the FDP technology, and has already completed the introduction test in major data centers in the United States and China.

The upcoming new-generation PCIe Gen5 SSD PM1753 of Samsung Electronics, compared with the previous-generation product, has a 1.6-fold improvement in sequential write performance and a 1.3 and 1.7-fold improvement in random read and write speeds, respectively.

Samsung said that while pursuing technological breakthroughs, the importance of AI processing power consumption cannot be ignored. Also taking the PM1753 based on TLC technology as an example, the sequential write energy efficiency under its AI workload is 1.7 times higher than that of the previous-generation, and the energy efficiency of random I/O operations in traditional servers is also increased by 1.6 times. AI applications need to optimize the power consumption during I/O operations, while also reducing the power consumption of the SSD in the standby state. The idle power consumption of the PM1753 has been reduced to 4 watts, and the next-generation product plans to compress the idle power consumption to 2 watts to help data centers achieve the goal of energy conservation and emission reduction. The PM1753 is expected to become an excellent solution required for generative AI server applications.

At the end of the speech, Samsung also introduced the HBM3E memory product that is currently undergoing customer tests, which is expected to reach a speed of up to 9.8 Gbps and a bandwidth of no less than 1 TB/s; and the next-generation HBM4 product is expected to be introduced to everyone in 2025. At the same time, Samsung also mentioned the industry's first SoC (processor)-based CMM product CMM-H, including CMM-PM and CMM-HTM, respectively, for data persistence and virtual machine migration needs, providing a more powerful memory solution for the AI era.

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Samsung Introduces BM1743 Data Center-level SSD: Equipped with v7 QLC V-NAND, Can Support PCIe 5.0