Japanese Semiconductor Energy Laboratory Showcases High-Brightness OLEDos Micro-Display

TapTechNews, May 30th. At theSID Display Week 2024 in mid-May, the Semiconductor Energy Laboratory of Japan showcased a double-layer tandem OLEDos (silicon-based OLED) micro-display with a brightness of 15,000 nits.

Japanese Semiconductor Energy Laboratory Showcases High-Brightness OLEDos Micro-Display_0

According to the information shared by DSCC analyst Guillaume Chansin on the X platform, this micro-display is 1.5 inches in size, with a resolution of 3840 * 2880 and a pixel density of 3207 PPI.

Japanese Semiconductor Energy Laboratory Showcases High-Brightness OLEDos Micro-Display_1

This 90-Hz OLEDos display uses square pixel units with a side length of 7.92 μm. Each unit contains approximately equal-sized red and green sub-pixels, and in addition, there is a blue sub-pixel whose size is about the sum of the first two.

The Semiconductor Energy Laboratory of Japan stated that the OLEDos display uses a lithography process in the deposition of luminescent materials.

The brightness index of 15,000 nits makes this micro-display suitable for applications such as XR headsets that require extremely high display brightness.

TapTechNews found out that eMagin under Samsung has already demonstrated a single-layer structure micro RGBOLED display panel with the same 15,000 nits brightness in 2023, but the resolution is lower, which is 1920 * 1200.

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