TapTechNews reader Wu Yanzu from South China provided a clue, thank you! TapTechNews reported on May 14th that Kim Gwi-wook, the head of HBM, announced in an official statement that the HBM technology has reached a new level in the industry. Industry demand has prompted SK Hynix to accelerate the development process, with the earliest launch of their HBM4E memory in 2026, with a bandwidth 1.4 times that of HBM4. In addition to HBM4E, according to previous reports from TapTechNews, it is rumored that SK Hynix plans to launch the first batch of HBM4 products with 12 layers of DRAM stacking in the second half of 2025, while the 16-layer stacked HBM is expected to be launched slightly later in 2026. The accelerated development of HBM4/HBM4E undoubtedly demonstrates the strong demand of industry giants in the AI field for high-performance memory. The increasingly powerful AI processors require higher memory bandwidth as support. Related read: SK Hynix accelerates mass production of HBM4 memory, aiming to launch the first batch of products in the second half of 2025 SK Hynix and TSMC sign a memorandum of understanding, aiming to start production of HBM4 in 2026.