Samsung to Build 1nm DRAM Production Line in Pyeongtaek P4 Factory

TapTechNews August 12th news, Korean media ETNews reported that Samsung Electronics has internally confirmed the investment plan to build a 1nm DRAM memory production line at the Pyeongtaek P4 factory, and the production line is targeted to be put into operation in June next year.

Pyeongtaek P4 is a comprehensive semiconductor production center, divided into four phases. In the earlier plan, the first phase is for NAND flash memory, the second phase is for logic foundry, and the third and fourth phases are for DRAM memory. Samsung has already introduced DRAM production equipment in the P4 first phase, but has suspended the construction of the second phase.

And 1nm DRAM is the sixth-generation 20 to 10nm-level memory process. The 1nm (or the corresponding 1γnm) products of each company have not been officially released yet. Korean media reported that Samsung Electronics plans to start 1nm memory production by the end of this year.

According to TapTechNews' previous report, Samsung Electronics is considering using 1nm DRAM dies in the HBM4 memory to be launched in the second half of next year, to improve the energy efficiency competitiveness of the HBM4 product with a more advanced DRAM process and catch up with the leader in the HBM field, SK Hynix.

Considering that the consumption of DRAM wafers by HBM memory is much higher than that of traditional memory, the construction of a 1nm DRAM production line at Pyeongtaek P4 is also preparing for possible HBM4 production needs.