AMD Plans to Use 3-nanometer GAA Process, Hinting at Potential Samsung Collaboration

TapTechNews on May 31, AMD's chief executive officer, Lisa Su, stated at the 2024 ITF World Congress that the company plans to use the 3-nanometer-level GAA process in future products, and currently only Samsung Electronics provides this process, hinting at a potential collaborative development of the 3-nanometer GAAFET process.

Lisa Su said at that time that 3-nanometer GAA transistors can improve efficiency and performance, and packaging and interconnect (interconnect) technologies have also improved, which will make AMD products more cost-effective and have higher power efficiency (powerefficiency).

The South Korean media Korea Economic Daily reported that Samsung Foundry is about to obtain an order from AMD to produce AMD's processors using the gate-all-around field-effect transistor (GAAFET) technology.

TapTechNews note: This news is not from an official source. However, if the report is true, it will mark the first time in recent years that AMD has adopted a dual-source product.

For AMD, by finding a foundry other than TSMC, it can expand production capacity, sell more products, establish important cooperative relationships, and add bargaining chips for price negotiations with TSMC.

For Samsung, getting AMD as a customer is crucial to narrowing the market share gap with TSMC. However, the gap between Samsung and TSMC is significant and requires years of efforts to continuously catch up and narrow the gap.