TapTechNews May 11th report, Samsung executives have predicted in June 2023 that V-NAND will be stacked to over 1000 layers by 2030, with recent news indicating that hafnium-based thin-film ferroelectrics (Hafnia Ferroelectrics) will be crucial to achieving this milestone.
Samsung executive Giwuk Kim will deliver a technical speech in June this year, titled Analysis of the Key Drivers of Hafnia Ferroelectrics in Advancing the Process of 1000 Layers Low Voltage and QLC 3D V-NAND, Including Experimental Demonstrations and Modeling.
In the summary, it states that in the Metal-Induced Floating Gate Inter-Layer (BE-G.IL), the ferroelectric (FE) switch, Channel Inter-Layer (Ch.IL) and Silicon (MIFIS) FeFET architecture, using FE switch interactions significantly enhances performance, underscoring Hafnia FE as a pivotal force in advancing the development of 3D V-NAND technology.
Previously reported by TapTechNews, Samsung plans to launch the 10th generation of NAND chips next year, employing triple stacking technology to achieve 430 layers, further enhancing NAND density, and consolidating and expanding its leadership position.
Related reading:
Samsung Predicts NAND with over 1000 Layers to Launch by 2030
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Heading towards 100 TB SSDs, Reports Suggest Samsung to Launch 10th Generation NAND Next Year: Triple Stacking Technology, Up to 430 Layers