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#Hafnia Ferroelectrics#
Hafnia Ferroelectrics Key to Breaking 1000 Layer Barrier, Samsung to Demonstrate New QLC 3D V-NAND Technology in June
Hafnium-based ferroelectrics identified as key for Samsung's upcoming 3D V-NAND technology breakthrough, aiming for 1000+ layers.
Maxwell
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Samsung
Hafnia Ferroelectrics
3D V NAND
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