TapTechNews June 17th, according to a report by Korean media TheElec, SK Hynix plans to significantly increase the production capacity of 1bnm process DRAM memory to meet the demand for HBM3E memory.
Because HBM memory consumes far more DRAM dies than standard memory, SK Hynix's further expansion of 1bnm process DRAM production capacity will help relieve the current shortage of HBM memory to a certain extent.
SK Hynix aims to increase the wafer output of 1bnm memory to 90,000 wafers by the end of this year and further increase it to 140,000 to 150,000 wafers in the first half of next year.
For this reason, SK Hynix plans to upgrade its M16 memory wafer fab in Icheon, Gyeonggi-do to 1bnm process.
M16 currently produces 1ynm DRAM memory. If it is completely transferred to 1bnm production, it is expected to cause SK Hynix's 1ynm production capacity to drop from the current 120,000 wafers per month to 50,000 wafers.
Korean media quoted a source in the semiconductor equipment industry as saying that SK Hynix has put forward requirements for equipment movement and transformation of the M16 wafer fab and plans to introduce only the necessary core equipment such as deposition, lithography and etching.
Some related people said that SK Hynix's additional investment is still affected by the previous trough period in the memory industry, and the overall decision-making process is very cautious, but the growth of related orders currently has exceeded the initial expectations of upstream equipment manufacturers.
TapTechNews reported in April that SK Hynix plans to complete the construction of the M15X DRAM memory wafer fab by November 2025. Korean media mentioned that related equipment orders are expected to be placed beginning in early 2025.