TapTechNews May 28th, according to the Japanese media Nikkan Kogyo Shimbun, Micron will invest 600 billion to 800 billion Japanese yen (TapTechNews note: currently about 27.72 billion to 36.96 billion Chinese yuan) to build a new DRAM memory wafer fab in Hiroshima, Japan.
The wafer fab will introduce EUV lithography machines and is planned to start construction in early 2026 and is expected to officially go into production by the end of 2027.
Micron will officially introduce the EUV lithography technology in the next-generation 1-gamma (nm) node to be mass-produced in 2025. Considering the generational cycle of the DRAM industry, the new Micron factory in Hiroshima will then have the ability to produce 1-gamma and even 1-delta DRAM.
The report pointed out that Micron originally planned to start the operation of the new wafer fab this year, so that it could expand the 1-gamma DRAM manufacturing capacity at the first time after the mass production in 2025.
However, due to the previous recession in the semiconductor industry, especially in the storage field, Micron adjusted its investment plan and slowed down the speed of capacity expansion.
Part of the expenditure for Micron to build the new plant will come from the subsidy of the Japanese Ministry of Economy, Trade and Industry, and this fund can be up to 192 billion Japanese yen (currently about 8.87 billion Chinese yuan).